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A half-bridge IGBT drive and protection circuit in dielectric barrier discharge power supply

Xingquan Wang (School of Physics and Electronic Information, Institute of Low Temperature Plasma Technology, Gannan Normal University, Ganzhou, China)
Xiuyuan Lu (School of Physics and Electronic Information, Institute of Low Temperature Plasma Technology, Gannan Normal University, Ganzhou, China)
Wei Chen (School of Physics and Electronic Information, Institute of Low Temperature Plasma Technology, Gannan Normal University, Ganzhou, China)
Fengpeng Wang (School of Physics and Electronic Information, Institute of Low Temperature Plasma Technology, Gannan Normal University, Ganzhou, China)
Jun Huang (School of Physics and Electronic Information, Institute of Low Temperature Plasma Technology, Gannan Normal University, Ganzhou, China)
Lingli Liu (School of Physics and Electronic Information, Institute of Low Temperature Plasma Technology, Gannan Normal University, Ganzhou, China)
Mengchao Li (School of Physics and Electronic Information, Institute of Low Temperature Plasma Technology, Gannan Normal University, Ganzhou, China)
Kui Lin (School of Physics and Electronic Information, Institute of Low Temperature Plasma Technology, Gannan Normal University, Ganzhou, China)

Circuit World

ISSN: 0305-6120

Article publication date: 29 July 2021

Issue publication date: 24 November 2022

103

Abstract

Purpose

This paper aims to improve the general circuit of driving and protection based on insulated gate bipolar transistor (IGBT) in dielectric barrier discharge power supply by designing a novel half-bridge inverter circuit with discrete components.

Design/methodology/approach

With one SG3524 chip, the structure based on discrete components is used to design the IGBT drive circuit. The driving waveform is isolated and sent out by photo-coupler 6N137. The protection circuit is realized by Hall sensor directly detecting the main circuit current, supplemented by a few components, including diodes, resistors, capacitors and triodes. It improves the reliability of the protection circuit.

Findings

In the driving circuit, the phase difference of signals from two channels are 180°. Moreover, when the duty cycle is set at 40%, it can ensure sufficient pulse width modulation response time. In the protection circuit, when over-current occurs, an intermittent output signal is automatically sent out. Furthermore, the over-current response time can be controlled independently. The peak voltage can be adjusted continuously from 0 to 30 kV with its frequency from 8 to 25 kHz and the power output up to 150 W.

Originality/value

The novel circuit of driving and protection makes not only its structure simpler and easier to be realized but also key parameters, such as frequency, the duty cycle and the driving voltage, continuously adjustable. Moreover, the power supply is suitable for other discharges such as corona discharge and jet discharge.

Keywords

Acknowledgements

This work was financially supported by the Natural Science Foundation of Jiangxi Province, China (Grant Nos. 20181BAB201018); the Science and Technology Project of Jiangxi Provincial Department of Education, China (Grant No. GJJ201414); the National Natural Science Foundation of China (Grant Nos. 22061002, 52067002 and 51862001).

Citation

Wang, X., Lu, X., Chen, W., Wang, F., Huang, J., Liu, L., Li, M. and Lin, K. (2022), "A half-bridge IGBT drive and protection circuit in dielectric barrier discharge power supply", Circuit World, Vol. 48 No. 4, pp. 586-593. https://doi.org/10.1108/CW-11-2020-0329

Publisher

:

Emerald Publishing Limited

Copyright © 2021, Emerald Publishing Limited

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