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Study of temperature reliability for a parallel high-efficiency class-E power amplifier

Qian Lin (College of Physics and Electronic Information Engineer, Qinghai University for Nationalities, Xining, China and School of Microelectronics, Tianjin University, Tianjin, China)
Haifeng Wu (Chengdu Ganide Technology Co Ltd, Chengdu, China)
Xi Li (School of Electronic Engineering and Automation, Tianjin University, Tianjin, China)

Circuit World

ISSN: 0305-6120

Article publication date: 7 August 2017

Abstract

Purpose

The purpose of this paper is to investigate the temperature reliability for a parallel high-efficiency class-E power amplifier (PA).

Design/methodology/approach

To explore the relationship between temperature and direct current (DC) characteristics, output power, S parameters and efficiency of the PA quantitatively, a series of reliability experiments have been designed and conducted to study the temperature reliability for this PA.

Findings

From the results, the prominent performance degradation even failure is found during the testing. Furthermore, the thermal shock test can cause permanent failure, which is a great threat for PA.

Research limitations/implications

Therefore, to ensure the good performance, the influence of temperature on PA reliability should be carefully considered during the stage of PA design.

Practical implications

All these can provide important guidance for the reliability design of PA.

Social implications

All these can give some important guidance for PA application.

Originality/value

In addition, PA is usually designed according to the electrical properties at the room temperature. From the results above, it can be concluded that it may be unable to satisfy the performance requirement at high temperature. In turn, if it is designed according to the electrical properties at low temperature, the transistor often works in the super-saturated state, the reliability of PA will become the new problem. Therefore, to ensure the good performance, the influence of temperature on PA reliability should be carefully considered during the design.

Keywords

Acknowledgements

This work was supported by the 2017 Applied Basic Research Plan of Qinghai (2017-ZJ-753), the Chun Hui Project of Education Ministry (Z2016071), the natural science foundation of Qinghai (2016-ZJ-922) and the open fund of wireless sensor network and communication key laboratory for Shanghai institute of micro-system and information technology of Chinese academy of sciences (2016002).

Citation

Lin, Q., Wu, H. and Li, X. (2017), "Study of temperature reliability for a parallel high-efficiency class-E power amplifier", Circuit World, Vol. 43 No. 3, pp. 111-117. https://doi.org/10.1108/CW-09-2016-0039

Publisher

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Emerald Publishing Limited

Copyright © 2017, Emerald Publishing Limited