The purpose of this paper was to present a simple and convenient technology to produce the electronic-grade CuO. The prepared electronic-grade CuO fully meets the demands of industrial production of high density interconnect (HDI).
A new method termed as open-circuit potential-time technology is proposed to measure the dissolution time of CuO in plating solution. X-ray diffraction (XRD) scanning electron microscopy (SEM) and inductively coupled plasma-atomic emission spectroscopy (ICP-AES) were used to characterize the prepared CuO. Solder shock and reflow tests were carried out to examine the Cu deposits.
All aspects of the prepared CuO meet the demands of printed circuit board (PCB) industry.
A simple and convenient technology was presented to produce the electronic-grade CuO. A new method was proposed to determine the dissolution time of CuO in plating solution.
This work is supported by Guangdong Innovative Research Team Program (NO. 2 0 1 3 0 1 C0 1 0 5 3 2 4 3 4 2) and PhD Programs Foundation of Ministry of Education of China (No. 20120185110021).
Lin, J., Wang, C., Chen, Y., He, W., Xiao, D. and Tan, Z. (2014), "Preparation of electronic-grade CuO for copper electrodeposition of printed circuit boards", Circuit World, Vol. 40 No. 4, pp. 127-133. https://doi.org/10.1108/CW-07-2014-0031
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