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An analytic method for parameter extraction of InP HBTs small-signal model

Jincan Zhang (Electrical Engineering College, Henan University of Science and Technology, Luoyang, China)
Min Liu (Electrical Engineering College, Henan University of Science and Technology, Luoyang, China)
Jinchan Wang (Electrical Engineering College, Henan University of Science and Technology, Luoyang, China)
Kun Xu (Electrical Engineering College, Henan University of Science and Technology, Luoyang, China)

Circuit World

ISSN: 0305-6120

Article publication date: 7 June 2021

114

Abstract

Purpose

High-speed Indium Phosphide (InP) HBTs have been widely used to design high-speed analog, digital and mixed-signal integrated circuits. The purpose of this study is to propose a new parameter extraction procedure for determining an improved T-topology small-signal equivalent circuit of InP heterojunction bipolar transistors (HBTs).

Design/methodology/approach

The alternating current crowding effect is considered through adding the intrinsic base capacitance in the small-signal equivalent circuit. All of the circuit parameters are extracted directly without using any approximation.

Findings

The extraction technique is more easily understood and clearer than other extraction methods, as the equations are derived from the S-parameters by peeling peripheral elements from small-signal models to get reduced ones and extracting each equivalent-circuit parameter using each equation.

Originality/value

To validate the presented parameter extraction technology, an n-p-n emitter-up InP HBT was analyzed adopting the method. Excellent agreement between measured and modeled S-parameters is obtained up to 40 GHz.

Keywords

Acknowledgements

The authors gratefully acknowledge financial support from the National Natural Science Foundation of China (Grant No: 61804046), and the Foundation of Department of Science and Technology of Henan Province (Grant No. 202102210322, 212102210286).

Citation

Zhang, J., Liu, M., Wang, J. and Xu, K. (2021), "An analytic method for parameter extraction of InP HBTs small-signal model", Circuit World, Vol. ahead-of-print No. ahead-of-print. https://doi.org/10.1108/CW-06-2020-0099

Publisher

:

Emerald Publishing Limited

Copyright © 2021, Emerald Publishing Limited

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