Design of bilayer graphene nanoribbon tunnel field effect transistor

Abstract

Purpose

The purpose of this paper is to design novel tunnel field effect transistor (TFET) using graphene nanoribbons (GNRs).

Design/methodology/approach

To design the proposed TFET, the bilayer GNRs (BLGNRs) have been used as the channel material. The BLGNR-TFET is designed in QuantumATK, depending on 2-D Poisson’s equation and non-equilibrium Green’s function (NEGF) formalism.

Findings

The performance of the proposed BLGNR-TFET is investigated in terms of current and voltage (I-V) characteristics and transconductance. Moreover, the proposed device performance is compared with the monolayer GNR-TFET (MLGNR-TFET). From the simulation results, it is investigated that the BLGNR-TFET shows high current and gain over the MLGNR-TFET.

Originality/value

This paper presents a new technique to design GNR-based TFET for future low power very large-scale integration (VLSI) devices.

Citation

Vobulapuram, R.K., Shaik, J.B., P., V., Mekala, D.P. and Lingayath, U. (2023), "Design of bilayer graphene nanoribbon tunnel field effect transistor", Circuit World, Vol. 49 No. 2, pp. 174-179. https://doi.org/10.1108/CW-05-2020-0079