A broadband 23.1 ∼ 27.2 GHz doherty power amplifier with peak output power of 24.3 dBm

Abstract

Purpose

This paper aims to implement a new high output power fully integrated 23.1 to 27.2 GHz gallium arsenide heterojunction bipolar transistor power amplifier (PA) to meet the stringent linearity requirements of LTE systems.

Design/methodology/approach

The direct input power dividing technique is used on the chip. Broadband input and output matching techniques are used for broadband Doherty operation.

Findings

The PA achieves a small-signal gain of 22.8 dB at 25.1 GHz and a saturated output power of 24.3 dBm at 25.1 GHz with a maximum power added efficiency of 31.7%. The PA occupies 1.56 mm² (including pads) and consumes a maximum current of 79.91 mA from a 9 V supply.

Originality/value

In this paper, the author proposed a novel direct input dividing technique with broadband matching circuits using a low Q output matching technique, and demonstrated a fully-integrated Doherty PA across frequencies of 23.1∼27.2 GHz for long term evolution-license auxiliary access (LTE-LAA) handset applications.

Citation

Fang, Y. and Zhang, Y. (2020), "A broadband 23.1 ∼ 27.2 GHz doherty power amplifier with peak output power of 24.3 dBm", Circuit World, Vol. 46 No. 1, pp. 1-5. https://doi.org/10.1108/CW-05-2019-0048