Heat generation in silicon nanometric semiconductor devices
COMPEL - The international journal for computation and mathematics in electrical and electronic engineering
Article publication date: 1 July 2014
The purpose of this paper is to deal with the self-heating of semiconductor nano-devices.
Transport in silicon semiconductor devices can be described using the Drift-Diffusion model, and Direct Simulation Monte Carlo (MC) of the Boltzmann Transport Equation.
A new estimator of the heat generation rate to be used in MC simulations has been found.
The new estimator for the heat generation rate has better approximation properties due to reduced statistical fluctuations.
Orazio Muscato and Vincenza Di Stefano acknowledge the support of “Progetti di Ricerca di Ateneo”, Università degli Studi di Catania, MIUR PRIN 2009 “Problemi Matematici delle Teorie Cinetiche e Applicazioni”, and the CINECA Award N. HP10COORUX, 2012 for the availability of high performance computing resources and support.
Muscato, O., Wagner, W. and Di Stefano, V. (2014), "Heat generation in silicon nanometric semiconductor devices", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 33 No. 4, pp. 1198-1207. https://doi.org/10.1108/COMPEL-11-2012-0327
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