Through silicon vias: from a physical point of view to a compact models initiation
ISSN: 0332-1649
Article publication date: 1 July 2014
Abstract
Purpose
The substrate coupling and loss in integrated circuits are analyzed. Then, the authors extract impedances between any numbers of embedded contacts. The paper aims to discuss these issues.
Design/methodology/approach
The paper proposes a new substrate network 3D extraction technique, adapted from a transmission line method or Green kernels, but in the whole volume.
Findings
Extracting impedances between any numbers of embedded contacts with variable shapes or/and through silicon via. This 3D method is much faster comparing with FEM
Originality/value
Previous works consider TSVs alone, contacts onto the substrate. The authors do study entanglement between the substrate and the interconnections.
Keywords
Acknowledgements
This work is supported by Infieri (Intelligent interconnected Fast and effective devices for Frontier the exploitation of research and industry) Program. One of us (Fengyuan Sun) thanks the China Scholarship Council (CSC).
Citation
Sun, F., Lorival, J.-E., Calmon, F. and Gontrand, C. (2014), "Through silicon vias: from a physical point of view to a compact models initiation", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 33 No. 4, pp. 1462-1484. https://doi.org/10.1108/COMPEL-06-2013-0201
Publisher
:Emerald Group Publishing Limited
Copyright © 2014, Emerald Group Publishing Limited