Analytical modeling of quantization effects in surrounding-gate MOSFETs
ISSN: 0332-1649
Article publication date: 1 January 2014
Abstract
Purpose
The purpose of this paper is to present an analytical model and simulation for cylindrical gate all around MOSFTEs including quantum effects.
Design/methodology/approach
To incorporating the impact of quantum effects, the authors have used variational method for solving the Poisson and Schrodinger equations. The accuracy of the results obtained using this model is verified by comparing them with simulation results.
Findings
This model is developed to provide an analytical expression for inversion charge distribution function for all regions of device operation. This expression is used to calculate the other important parameters like inversion charge centroid, threshold voltage, inversion charge, gate capacitance and drain current. The calculated expressions for the above parameters are simple and accurate. The validity of this model was checked for the devices with different dimensions and bias voltages.
Practical implications
Simulation based on the compact physical models reduces the cost of developing a sophisticated fabrication technology and shortens the time-to-market. They may also be utilized to explore innovative device structures.
Originality/value
This paper presents, for the first time, a compact quantum analytical model for cylindrical surrounding gate MOSFETs which predicts the device characteristics reasonably well over the entire range of device operation (above threshold as well as sub-threshold region).
Keywords
Acknowledgements
The authors would like to thank the financial support by WOS-A Scheme, Department of Science and Technology, New Delhi, Government of India. The authors also wish to acknowledge Dr V. Abhaikumar, Thiagarajar College of Engineering, Madurai, India and Prof. Durga Misra, New Jersey Institute of Technology, Newark, NJ 07102 for the helpful discussion.
Citation
Palanichamy, V. and Balamurugan, N.B. (2014), "Analytical modeling of quantization effects in surrounding-gate MOSFETs", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 33 No. 1/2, pp. 630-644. https://doi.org/10.1108/COMPEL-03-2013-0101
Publisher
:Emerald Group Publishing Limited
Copyright © 2014, Emerald Group Publishing Limited