The purpose of this paper is to study conducted electromagnetic interference (EMI) of the high-low voltage DC/DC converter based on GaN high-electron-mobility transistors (HEMTs) in electric vehicle, and design EMI filters to suppress the conducted EMI.
The conducted EMI propagation model is established through simulation and analysis studying the influences of parasitic parameters, operation mode, output power and near-field capacitive coupling effects on conducted EMI of the DC/DC converter and comparing the suppression effects of EMI filters with different topologies to select the best EMI filter.
It is shown that parasitic parameters, operation mode, output power and near-field capacitive coupling effects can affect the conducted EMI of the DC/DC converter, and EMI filters of the CLC topology can effectively suppress the conducted EMI below the limit of CISPR 25.
Analysis of conducted EMI and design of EMI filters greatly facilitate further explorations and studies on EMI problems of the high-low voltage DC/DC converter based on GaN HEMTs.
This work was supported by the National Natural Science Foundation of China under Grant No. 51877066.
Qiao, Y., Yang, W., Huo, T., Chen, G., Zhang, H. and Luan, J. (2023), "Conducted EMI analysis and filters design for a high-low voltage DC/DC converter based on GaN HEMTs in electric vehicle", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 42 No. 1, pp. 194-206. https://doi.org/10.1108/COMPEL-01-2022-0055
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