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Silicon pressure sensors with a thick film periphery

Darko Belavič (HIPOT, Trubarjeva, Šentjernei, Slovenia)
Stojan Šoba (HIPOT, Trubarjeva, Šentjernei, Slovenia)
Marko Pavlin (HIPOT, Trubarjeva, Šentjernei, Slovenia)
Dubravka Ročak (Jožef Stefan Institute, Jamova, Ljubljana, Slovenia)
Marko Hrovat (Jožef Stefan Institute, Jamova, Ljubljana, Slovenia)

Microelectronics International

ISSN: 1356-5362

Article publication date: 1 December 1998



Silicon piezoresistive pressure sensor dies are mounted on a ceramic substrate where the signal conditioning electronics are implemented in thick film technology. In this paper some of these techniques, e.g. special attachment and bonding requirements, methods for temperature compensation, the principles of parameter adjustment, and encapsulation, are presented. For illustration two examples are described. The first is a multipoint monitoring system with 720 measuring points in a test mattress. The second example is a family of industrial pressure transducers.



Belavič, D., Šoba, S., Pavlin, M., Ročak, D. and Hrovat, M. (1998), "Silicon pressure sensors with a thick film periphery", Microelectronics International, Vol. 15 No. 3, pp. 26-30.




Copyright © 1998, Company

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