A five‐layer thin film MCM‐Si design using oxynitride dielectrics

Jo Lernout (Alcatel Telecom, Antwerp, Belgium)

Microelectronics International

ISSN: 1356-5362

Publication date: 1 April 1998

Abstract

A novel technology for a multichip module (MCM) on silicon is presented. The technology features the integration of a power and a ground plane, resulting in a five‐conductor layer module, the use of the heavily (n+) doped Si as the ground plane for integrated decoupling capacitances, integrated low TCR NiCr resistors, low resistance (13mΩ per square) TiW/Cu/TiW metallisation, high quality PECVD oxynitride (SiON) insulation layers, which are optimised to a low stress content, and a new wet‐dry etch technique for the vias. The module is able to handle 200MHz clock frequencies and, when carefully designed, can also be used for opto‐electronic interconnections in the GHz range. A test module for DC and HF characterisation has been designed and produced. Preliminary test results are presented.

Keywords

Citation

Lernout, J. (1998), "A five‐layer thin film MCM‐Si design using oxynitride dielectrics", Microelectronics International, Vol. 15 No. 1, pp. 39-42. https://doi.org/10.1108/13565369810199121

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Publisher

:

MCB UP Ltd

Copyright © 1998, MCB UP Limited

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