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Effects of Lift‐off Procedures on Mechanical and Chemical Properties of Photoresists

N. Imber (Raphael Department of Microelectronics, Haifa, Israel)
M. Hershcovitz (Raphael Department of Microelectronics, Haifa, Israel)
A. Ashur (Raphael Department of Microelectronics, Haifa, Israel)
I. E. Klein (Raphael Department of Microelectronics, Haifa, Israel)

Microelectronics International

ISSN: 1356-5362

Article publication date: 1 April 1997

Abstract

A study was undertaken to correlate macroscopic profile variations in the photoresist during lift‐off procedures with changes in material properties. It was established that soaking in chlorobenzene, which gave rise to negative slopes, was accompanied by hardening of the top layer of the photoresist and caused the surface to become hydrophobic. FTIR measurements did not yield new information about variations in chemical bonding.

Keywords

Citation

Imber, N., Hershcovitz, M., Ashur, A. and Klein, I.E. (1997), "Effects of Lift‐off Procedures on Mechanical and Chemical Properties of Photoresists", Microelectronics International, Vol. 14 No. 1, pp. 14-15(continued on page 19). https://doi.org/10.1108/13565369710800448

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MCB UP Ltd

Copyright © 1997, MCB UP Limited