Effects of Lift‐off Procedures on Mechanical and Chemical Properties of Photoresists

Abstract

A study was undertaken to correlate macroscopic profile variations in the photoresist during lift‐off procedures with changes in material properties. It was established that soaking in chlorobenzene, which gave rise to negative slopes, was accompanied by hardening of the top layer of the photoresist and caused the surface to become hydrophobic. FTIR measurements did not yield new information about variations in chemical bonding.

Citation

Imber, N., Hershcovitz, M., Ashur, A. and Klein, I.E. (1997), "Effects of Lift‐off Procedures on Mechanical and Chemical Properties of Photoresists", Microelectronics International, Vol. 14 No. 1, pp. 14-15(continued on page 19). https://doi.org/10.1108/13565369710800448