Fine‐line Passive Components for Hybrid Microelectronics

V. Kripesh (Max‐Planck‐Institut fur Metallforschung and Institut fur Metallkunde, Stuttgart, Germany.)
S.K. Bhatnagar (Central Electronics Engineering Research Institute, Pilani, India)
H. Osterwinter (Fachochschule fur Technik Esslingen, Goppingen, Germany)
W. Gust (Max‐Planck‐Institut fur Metallforschung and Institut fur Metallkunde, Stuttgart, Germany.)

Microelectronics International

ISSN: 1356-5362

Publication date: 1 December 1996

Abstract

A laser ablation technique has been used to fabricate conductor patterns on a 96% alumina substrate to evolve passive fine‐line components and structures. This paper reports the method of fabricating better fine‐line passive components for hybrid microelectronics application. The effect of a laser beam on the conductor and 96% alumina (Al2O3) substrate was studied in detail. Three predominant structures — namely debris, ablation border and irradiated bottom layer — were seen on the patterns. A detailed study of the dendritic growth caused by electrochemical migration on conductor lines fabricated by conventional screen printing and by laser ablation techniques is also reported.

Keywords

Citation

Kripesh, V., Bhatnagar, S., Osterwinter, H. and Gust, W. (1996), "Fine‐line Passive Components for Hybrid Microelectronics", Microelectronics International, Vol. 13 No. 3, pp. 9-11. https://doi.org/10.1108/13565369610800359

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MCB UP Ltd

Copyright © 1996, MCB UP Limited

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