X‐ray diffraction studies of Al
xGa1− xN (0≤ x≤1) ternary alloys grown on sapphire substrate
Article publication date: 10 May 2011
The purpose of this paper is to report the structural properties of AlxGa1−xN (0≤x≤1) grown on sapphire substrate by means of X‐ray diffraction (XRD) technique. The main purpose of this work was to investigate the effects of Al(x) composition to the structural and microstructural properties of AlxGa1−xN ternary alloy such as the crystalline quality, crystalline structure and lattice constant c.
AlxGa1−xN thin films with wurtzite structure in the composition range of 0≤x≤1 are used in this study. The compositions of the samples are calculated using Vegard's law and verified by energy dispersive X‐ray analysis. The samples are then characterized by means of XRD rocking curve (RC) and phase analysis.
Investigation revealed that the full width half maximum (FWHM) of RC increase with the increase x value. This indicates that the crystalline quality of the samples deteriorate with the increase of Al compositions. The best fit of the non‐linear interpolation of the FWHM of the (002) diffraction RC data suggested that a maximum disorder should be expected in this mixed crystals system when the composition x≈45 percent.
This paper provides valuable information on the effect of Al compositions to the structural characteristics of AlxGa1−xN alloy system. The availability of information about maximum disorder of Al composition in AlxGa1−xN (0≤x≤1) alloy system provides useful reference in device fabrications where researchers are able to choose correct alloy composition in order to fabricate good quality devices.
Sha Shiong, N., Chin Guan, C., Hassan, Z. and Abu Hassan, H. (2011), "X‐ray diffraction studies of Al
Emerald Group Publishing Limited
Copyright © 2011, Emerald Group Publishing Limited