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The effect of low temperature thermal annealing on the properties of organic light‐emitting device

Chun‐lin Zhang (School of Physical Science and Technology, Institute of Microelectronics, Lanzhou University, Lanzhou, People's Republic of China School of Mathematics, Physics and Software Engineering, Lanzhou Jiaotong University, Lanzhou, People's Republic of China)
Yong Zhang (Office of Natural Sciences, Editorial Board of Journal of Lanzhou University, Lanzhou, People's Republic of China)
Fang‐cong Wang (School of Physical Science and Technology, Institute of Microelectronics, Lanzhou University, Lanzhou, People's Republic of China)
Ying Wei (School of Physical Science and Technology, Institute of Microelectronics, Lanzhou University, Lanzhou, People's Republic of China)
Xiao‐yun Jia (School of Physical Science and Technology, Institute of Microelectronics, Lanzhou University, Lanzhou, People's Republic of China)
Su Liu (School of Physical Science and Technology, Institute of Microelectronics, Lanzhou University, Lanzhou, People's Republic of China)

Microelectronics International

ISSN: 1356-5362

Article publication date: 25 January 2011

529

Abstract

Purpose

The purpose of this paper is to study the effect of on device performance by selectively annealing ITO substrates and TPD:PVK layers of the OLED at different temperatures with a certain annealing time.

Design/methodology/approach

Thermal annealing was carried out on the ITO anode at different temperatures (150, 350, 500°C) with a constant time (100 min); but also before the deposition of the tris(8‐hydroxyquinolato) aluminum (Alq3) layer, at the same time, thermal treatment was carried out on the hole transporting layers (TPD:PVK layers) at different temperatures (70, 90, 110°C), and the annealing time was 30 min. We fabricated a novel device with the structure of Al/LiF/Alq3/TPD:PVK/NiO/ITO/Glass, and tested the sheet resistance, SEM and XRD of ITO anode after annealing, at the same we also tested the I‐V, L‐V and current efficiency characteristics of OLED.

Findings

When the TPD:PVK layers were annealed at 90°C with 30 min annealing time and ITO substrates were annealed at 350°C with a constant annealing time (100 min), we find that the OLED shows obvious performance improvement, which is attributable to the fact that annealing reduces defects and improves the interface structures of organics and organic/ITO interface. On the other hand, an annealing TPD:PVK layers would slow and even impede the transport of holes, and finally leads to more balanced electron and hole injection processes.

Originality/value

The paper shows that the annealing method can be used to prepare high‐performance organic light‐emitting device.

Keywords

Citation

Zhang, C., Zhang, Y., Wang, F., Wei, Y., Jia, X. and Liu, S. (2011), "The effect of low temperature thermal annealing on the properties of organic light‐emitting device", Microelectronics International, Vol. 28 No. 1, pp. 66-70. https://doi.org/10.1108/13565361111097137

Publisher

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Emerald Group Publishing Limited

Copyright © 2011, Emerald Group Publishing Limited

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