Comparison between models for p‐n junctions parameters extraction

G.C. Pesenti (PGMICRO, UFRGS, Porto Alegre, Brazil)
H. Boudinov (Instituto de Física, UFRGS, Porto Alegre, Brazil)

Microelectronics International

ISSN: 1356-5362

Publication date: 8 May 2009



The purpose of this paper is to compare different junctions' parameters extraction models.


I‐V curves of p+n and pwelln diodes were measured. Five models for parameters extraction on I‐V characteristics of diodes in an educational poly‐Si gate pwell complementary metal oxide semiconductor (CMOS) technology were applied. The junctions' areas were 30 × 30 μm for the source‐body p+n junction of the PMOS transistor and 220 × 250 μm for the pwell‐body junction. The diodes were sintered in forming gas (10 percent of H2) in the temperature interval of 450‐525°C for times from 30 min up to 4 h.


It was shown that the best annealing regimes are different for both kinds of junctions.


The paper shows that the best annealing regime for p+n diodes (the lowest n and I0 values) is 450°C, 30 min and for the pwelln diodes (the lowest I0 values) is 525°C, 60 min. So, for the different kinds of junctions in one integrated circuit, different annealings could give the best parameters and the optimization depends on the specific characteristics of the developed technology.



Pesenti, G. and Boudinov, H. (2009), "Comparison between models for p‐n junctions parameters extraction", Microelectronics International, Vol. 26 No. 2, pp. 37-40.

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