Ruthenium dioxide doped manganite‐based NTC thermistors for low‐resistance applications

Shweta Jagtap (Thick Film Materials Laboratory, Centre for Materials for Electronics Technology, Pune, India)
(Department of Electronic Science, University of Pune, Pune, India)
Sunit Rane (Thick Film Materials Laboratory, Centre for Materials for Electronics Technology, Pune, India)
Suresh Gosavi (Department of Physics, University of Pune, Pune, India)
Dinesh Amalnerkar (Thick Film Materials Laboratory, Centre for Materials for Electronics Technology, Pune, India)

Microelectronics International

ISSN: 1356-5362

Publication date: 8 May 2009

Abstract

Purpose

The purpose of this paper is to study the properties of disc type negative temperature coefficient (NTC) thermistors based on the spinel system Mn‐Co‐Ni‐O with the doping of RuO2 for the low‐resistance applications.

Design/methodology/approach

Emphasis was placed on the properties of ruthenium dioxide doped manganite spinel system for low‐resistance applications. The properties such as microstructure, X‐ray diffraction analysis and electrical properties are reported.

Findings

The prepared NTC thermistor compositions revealed the room temperature resistance and thermistor constant in the range of 28‐2,950 Ω and 1,539‐3,428 K, respectively. Hence, the prepared NTC thermistors with low resistance and moderate sensitivity are suitable from an industrial applications point of view.

Originality/value

The paper reports upon a synthesis procedure which is a straightforward preparation of highly densified ternary oxide (Mn‐Co‐No‐O) thermistors.

Keywords

Citation

Jagtap, S., Rane, S., Gosavi, S. and Amalnerkar, D. (2009), "Ruthenium dioxide doped manganite‐based NTC thermistors for low‐resistance applications", Microelectronics International, Vol. 26 No. 2, pp. 19-23. https://doi.org/10.1108/13565360910960196

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Publisher

:

Emerald Group Publishing Limited

Copyright © 2009, Emerald Group Publishing Limited

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