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VDMOSFET reliability dependence on the integrated drain‐source junction

R. El Bitar (ELIAUS, Université de Perpignan Via Domitia, Perpignan, France)
R. Habchi (LPSE, Faculty of Sciences II, Lebanese University, Jdeidet El Metn, Lebanon)
C. Salame (LPSE, Faculty of Sciences II, Lebanese University, Jdeidet El Metn, Lebanon)
A. Khoury (LPSE, Faculty of Sciences II, Lebanese University, Jdeidet El Metn, Lebanon)
P. Mialhe (ELIAUS, Université de Perpignan Via Domitia, Perpignan, France)
B. Nsouli (The Lebanese Atomic Energy Commission, Airport Highway, Beirut, Lebanon)

Microelectronics International

ISSN: 1356-5362

Article publication date: 23 January 2009

175

Abstract

Purpose

–

This work aims to investigate the modifications in a transistor behavior after hot carrier injection processes from the integrated junction.

Design/methodology/approach

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A high voltage is applied across the drain‐source contacts, so a reverse current is induced through the integrated junction and defects are then created.

Findings

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The results point out to a dependence of the VDMOSFET reliability on the operating conditions which could induce parasitic effects on the structure. Induced defects alter the form of several MOSFET characteristics.

Originality/value

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A new method of degradation is presented along with a series of characterization techniques‐based electrical parameters variations.

Keywords

Citation

El Bitar, R., Habchi, R., Salame, C., Khoury, A., Mialhe, P. and Nsouli, B. (2009), "VDMOSFET reliability dependence on the integrated drain‐source junction", Microelectronics International, Vol. 26 No. 1, pp. 33-36. https://doi.org/10.1108/13565360910923142

Publisher

:

Emerald Group Publishing Limited

Copyright © 2009, Emerald Group Publishing Limited

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