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Silicon MOSFET devices electrical parameters evolution at high temperatures

C. Salame (CEA‐LPSE, Faculty of Sciences II, Lebanese University, Jdeidet El Mten, Lebanon CNRSL, National Council for Scientific Research, Beirut, Lebanon)
R. Habchi (CEA‐LPSE, Faculty of Sciences II, Lebanese University, Jdeidet El Mten, Lebanon LP2A, Université de Perpignan, Perpignan, France)

Microelectronics International

ISSN: 1356-5362

Article publication date: 1 January 2008

278

Abstract

Purpose

The purpose of this paper is to discuss the temperature failure effect on electronic components and their electrical parameters variation.

Design/methodology/approach

The MOSFET device parameters analysis was done by numerical analysis based on a double exponential model using the integrated pn junction.

Findings

The temperature dependence of these parameters is investigated; their evolution allows the evaluation of device's operation reliability in high‐temperature environments.

Originality/value

The paper demonstrates how the temperature affect the normal operation of the electronic device and the model accuracy is investigated at high temperature.

Keywords

Citation

Salame, C. and Habchi, R. (2008), "Silicon MOSFET devices electrical parameters evolution at high temperatures", Microelectronics International, Vol. 25 No. 1, pp. 21-24. https://doi.org/10.1108/13565360810846608

Publisher

:

Emerald Group Publishing Limited

Copyright © 2008, Emerald Group Publishing Limited

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