Silicon MOSFET devices electrical parameters evolution at high temperatures
Abstract
Purpose
The purpose of this paper is to discuss the temperature failure effect on electronic components and their electrical parameters variation.
Design/methodology/approach
The MOSFET device parameters analysis was done by numerical analysis based on a double exponential model using the integrated pn junction.
Findings
The temperature dependence of these parameters is investigated; their evolution allows the evaluation of device's operation reliability in high‐temperature environments.
Originality/value
The paper demonstrates how the temperature affect the normal operation of the electronic device and the model accuracy is investigated at high temperature.
Keywords
Citation
Salame, C. and Habchi, R. (2008), "Silicon MOSFET devices electrical parameters evolution at high temperatures", Microelectronics International, Vol. 25 No. 1, pp. 21-24. https://doi.org/10.1108/13565360810846608
Publisher
:Emerald Group Publishing Limited
Copyright © 2008, Emerald Group Publishing Limited