Silicon MOSFET devices electrical parameters evolution at high temperatures
Article publication date: 1 January 2008
The purpose of this paper is to discuss the temperature failure effect on electronic components and their electrical parameters variation.
The MOSFET device parameters analysis was done by numerical analysis based on a double exponential model using the integrated pn junction.
The temperature dependence of these parameters is investigated; their evolution allows the evaluation of device's operation reliability in high‐temperature environments.
The paper demonstrates how the temperature affect the normal operation of the electronic device and the model accuracy is investigated at high temperature.
Salame, C. and Habchi, R. (2008), "Silicon MOSFET devices electrical parameters evolution at high temperatures", Microelectronics International, Vol. 25 No. 1, pp. 21-24. https://doi.org/10.1108/13565360810846608
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