Hot carrier injection in VDMOSFET for improvement of commutation process
Article publication date: 31 July 2007
The purpose of this work is to highlight the evolutions of the switching times parameters of commercial vertical diffuse metal oxide semiconductor field effect transistors after a hot carrier injection in the reverse bias pn junction.
Experiment was done basically by hot carrier injection, where a large drain‐source voltage VDS is applied to reverse bias the body drain junction, then inducing a 30 mA reverse current. The drain polarization was increased gradually, by steps of 0.5 V/s, up to desired VDS value in order to prevent sudden breakdown. Switching time parameters were measured at different temperatures and up to 300°C.
The experimental results show that the device rise time decreases significantly for the first period of stress time at room temperature, which increases the speed of the device during this turn‐on switch. This event was associated with the high‐electric field in the junction region that pulls electrons from the oxide gate into the channel, thus leaving trapped holes in the oxide bulk due to their low mobility.
This research study has an important value in terms of engineering application where speed of electronic devices is one of the most valuable parameters in the communication and information technology fields.
El Bitar, R., Salame, C. and Mialhe, P. (2007), "Hot carrier injection in VDMOSFET for improvement of commutation process", Microelectronics International, Vol. 24 No. 3, pp. 60-65. https://doi.org/10.1108/13565360710779217
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