The paper aims to focus on the semiconductor temperature prediction in the multichip modules by using a simplified 1D model, easy to implement in the electronic simulation tools.
Accurate prediction of temperature variation of power semiconductor devices in power electronic circuits is important for obtaining optimum designs and estimating reliability levels. Temperature estimation of power electronic devices has generally been performed using transient thermal equivalent circuits. This paper has studied the thermal behaviour of the power modules. The study leads to correcting the junction temperature values estimated from the transient thermal impedance of each component operating alone. The corrections depend on multidimensional thermal phenomena in the structure.
The classic analysis of thermal phenomena in the multichip structures, independently of powers’ dissipated magnitude and boundary conditions, is not correct. An advanced 1D thermal model based on the finite element method is proposed. It takes into account the effect of the heat‐spreading angle of the different devices in the module.
The paper focuses on mathematical model of the thermal behaviour in the power module. The study leads to a correction of the junction temperature values estimated from the transient thermal impedance of each component given by manufacturers. The proposed model gives a good trade‐off between accuracy, efficiency and simulation cost.
Ammous, K., Abid, S. and Ammous, A. (2007), "Thermal modeling of semiconductor devices in power modules", Microelectronics International, Vol. 24 No. 3, pp. 46-54. https://doi.org/10.1108/13565360710779190Download as .RIS
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