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Study of the effect of substrate bias on the electrical properties of sputtered HfO2 thin film deposited on silicon substrate

R.K. Nahar (Central Electronics Engineering Research Institute, Pilani, India)
Aparna Sharma (Central Electronics Engineering Research Institute, Pilani, India)

Microelectronics International

ISSN: 1356-5362

Article publication date: 2 January 2007

394

Abstract

Purpose

HfO2 has emerged as the most promising high k dielectric for an alternative gate material. As‐deposited HfO2 thin films have large number of defects resulting in increased oxide charge and leakage current. Film deposition condition plays an important role. This paper investigates the effect of sputtering voltage, bias sputtering and post deposition thermal annealing.

Design/methodology/approach

The microstructure of the film is examined by AFM. The I‐V and C‐V characteristics is evaluated from Al‐HfO2‐Si capacitor structures and the effect of processing conditions is studied. The experimental results are reported and discussed for improving film properties.

Findings

It is found that applying substrate bias during film deposition improves interface and reduce leakage current and oxide charges.

Originality/value

The paper studies the effect of deposition voltage and thermal annealing on thin film deposition of HfO2 by rf sputtering.

Keywords

Citation

Nahar, R.K. and Sharma, A. (2007), "Study of the effect of substrate bias on the electrical properties of sputtered HfO2 thin film deposited on silicon substrate", Microelectronics International, Vol. 24 No. 1, pp. 46-48. https://doi.org/10.1108/13565360710725946

Publisher

:

Emerald Group Publishing Limited

Copyright © 2007, Emerald Group Publishing Limited

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