Temperature dependence of silicon power MOSFETs switching parameters

Abstract

Purpose

This paper presents measurements of device switching parameters performed on a commercial power MOSFET under high temperature conditions, along with the inverse and direct source‐drain current.

Design/methodology/approach

Device temperature was linearly increased from 20 to 300°C. Switching times were measured by monitoring the current waveforms when the device was turned off and on. The gate was biased by a 10 V square signal while a 50 V DC bias was applied between the drain and source. The inverse current was measured under Vg=0V.

Findings

The device response to being turned off becomes faster at high temperatures. The inverse leakage current is insignificant under 300°C but it increases rapidly after this limit. The direct saturation current increases with temperature for the same gate tension. These phenomena were associated to the thermal activation of defects.

Originality/value

This paper offers information about switching performance of low cost commercial MOS devices in high temperature conditions. This information is essential in the microelectronic industry of harsh environments.

Citation

Habchi, R., Salame, C., Nsouli, B. and Mialhe, P. (2006), "Temperature dependence of silicon power MOSFETs switching parameters", Microelectronics International, Vol. 23 No. 2, pp. 21-23. https://doi.org/10.1108/13565360610659662