TY  - JOUR
AB  - Purpose– To develop a silicon lateral Schottky rectifier with low forward voltage drop and low reverse leakage current while its breakdown voltage is significantly larger than that of a conventional Schottky rectifier.Design/methodology/approach– A two‐dimensional device simulation has been used, to examine the effect lateral dual sidewall Schottky concept on the current‐voltage characteristics of a lateral Schottky rectifier on silicon‐on‐insulator. The Schottky contact consists of a low‐barrier metal and a high‐barrier metal.Findings– Results show that, during forward bias, the low‐barrier Schottky (LBS) contact conducts resulting in a low forward voltage drop. During the reverse bias, the LBS contact is shielded by the depletion region of the high‐barrier Schottky contact resulting in a low reverse leakage current.Practical implications– With this approach, silicon Schottky rectifiers with low power dissipation and improved breakdown voltage can be realized.Originality/value– The proposed device has a large commercial potential as a low‐power high‐voltage switching device.
VL  - 23
IS  - 1
SN  - 1356-5362
DO  - 10.1108/13565360610642705
UR  - https://doi.org/10.1108/13565360610642705
AU  - Jagadesh Kumar M.
AU  - Linga Reddy C.
PY  - 2006
Y1  - 2006/01/01
TI  - Silicon‐on‐insulator lateral dual sidewall Schottky (SOI‐LDSS) concept for improved rectifier performance: a two‐dimensional simulation study
T2  - Microelectronics International
PB  - Emerald Group Publishing Limited
SP  - 16
EP  - 18
Y2  - 2024/05/12
ER  -