To develop a silicon lateral Schottky rectifier with low forward voltage drop and low reverse leakage current while its breakdown voltage is significantly larger than that of a conventional Schottky rectifier.
A two‐dimensional device simulation has been used, to examine the effect lateral dual sidewall Schottky concept on the current‐voltage characteristics of a lateral Schottky rectifier on silicon‐on‐insulator. The Schottky contact consists of a low‐barrier metal and a high‐barrier metal.
Results show that, during forward bias, the low‐barrier Schottky (LBS) contact conducts resulting in a low forward voltage drop. During the reverse bias, the LBS contact is shielded by the depletion region of the high‐barrier Schottky contact resulting in a low reverse leakage current.
With this approach, silicon Schottky rectifiers with low power dissipation and improved breakdown voltage can be realized.
The proposed device has a large commercial potential as a low‐power high‐voltage switching device.
Jagadesh Kumar, M. and Linga Reddy, C. (2006), "Silicon‐on‐insulator lateral dual sidewall Schottky (SOI‐LDSS) concept for improved rectifier performance: a two‐dimensional simulation study", Microelectronics International, Vol. 23 No. 1, pp. 16-18. https://doi.org/10.1108/13565360610642705Download as .RIS
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