Properties of PZT thick films made on LTCC

Abstract

Purpose

To find properties of screen printed PZT (PbZr_0.53Ti_0.47O₃ with 6 per cent of PbO and 2 per cent of Pb₅Ge₃O₁₁) thick films layers on LTCC substrate.

Design/methodology/approach

The influence of PZT firing time and electrode materials on electrical characteristics and microstructure were examined. A scanning electron microscope (SEM) equipped with an energy‐dispersive X‐ray (EDS) analyser was used for the microstructural and compositional analysis.

Findings

Microstructural and compositional analyses have shown the diffusion of SiO₂ from LTCC into PZT layers and the diffusion of PbO in the opposite direction. SiO₂ presumably forms low permitivity lead based silicates in PZT layer. The new phase deteriorates the piezoelectric properties. The amount of diffused materials was dependent upon the electrode material and increased with increasing firing time. Better properties, i.e. higher remanent polarisation and dielectric constant were achieved for samples with PdAg electrodes and shorter firing time.

Originality/value

New information on electrical and microstructural properties of thick film PZT made on LTCC substrate.

Citation

Golonka, L.J., Buczek, M., Hrovat, M., Belavič, D., Dziedzic, A., Roguszczak, H. and Zawada, T. (2005), "Properties of PZT thick films made on LTCC", Microelectronics International, Vol. 22 No. 2, pp. 13-16. https://doi.org/10.1108/13565360510592171