Thermal strain analysis of IC packages using various Moiré methods

Z.W. Zhong (School of Mechanical and Production Engineering, Nanyang Technological University, Singapore)

Microelectronics International

ISSN: 1356-5362

Publication date: 1 December 2004


This paper reports on thermal strain analysis of integrated circuit (IC) packages using the optical, atomic force microscope (AFM), and scanning electron microscope (SEM) Moiré methods. The advantages and disadvantages of a full field optical Moiré, a micro‐optical Moiré, AFM Moiré, and SEM Moiré methods are compared. The full field Moiré interferometry is used to investigate the deformations and strains induced by thermal loading in various packages at the macrolevel. The micro Moiré interferometry is used to study the strains in the small solder joints. An optical Moiré interferometer with a mini thermal‐cycling chamber can be used for real time measurements of thermal deformations and strains of IC packages under thermal testing. Furthermore, the novel methods, AFM Moiré and SEM Moiré, can be also utilized to measure thermally induced deformations and strains of IC packages conveniently using the equipment that is commonly and primarily used for many other applications.



Zhong, Z. (2004), "Thermal strain analysis of IC packages using various Moiré methods", Microelectronics International, Vol. 21 No. 3, pp. 25-28.

Download as .RIS



Emerald Group Publishing Limited

Copyright © 2004, Emerald Group Publishing Limited

Please note you might not have access to this content

You may be able to access this content by login via Shibboleth, Open Athens or with your Emerald account.
If you would like to contact us about accessing this content, click the button and fill out the form.
To rent this content from Deepdyve, please click the button.