To read this content please select one of the options below:

Thermal degradation of joined thick Au and Al elements

A. Bochenek (Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Wroclaw, Poland)
B. Bober (Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Wroclaw, Poland)
W. Hauffe (Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Wroclaw, Poland)
M. Lukaszewicz (Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Wroclaw, Poland)
E. Langer (Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Wroclaw, Poland)

Microelectronics International

ISSN: 1356-5362

Article publication date: 1 April 2004

300

Abstract

Investigations were aimed at the evaluation of degradation mechanisms in ultrasonically welded joints of AlSi1 per cent wire (25 μm in diameter) and Au substrate (100 μm thick), relatively thick elements, exposed to high temperature of 300°C up to 100 h. Thermally activated Al diffusion into Au generates the formation of intermetallic compounds in the area of the bond interface. With the longer thermal exposure the expansion and transformation of intermetallic compounds is observed. The characteristic “intermetallic compounds core” is formed, which from one side penetrates into the wire material and from another spreads deeply into the Au substrate up to enhancing band of Kirkendall voids.

Keywords

Citation

Bochenek, A., Bober, B., Hauffe, W., Lukaszewicz, M. and Langer, E. (2004), "Thermal degradation of joined thick Au and Al elements", Microelectronics International, Vol. 21 No. 1, pp. 31-34. https://doi.org/10.1108/13565360410517102

Publisher

:

Emerald Group Publishing Limited

Copyright © 2004, Emerald Group Publishing Limited

Related articles