Edge potential effect on the operation of short‐channel devices

Abstract

We have solved the two‐dimensional Poisson's equation for short‐channel device under the assumption that even in the absence of drain‐to‐source voltage (V_DS), a potential occurs at the edges (source/drain) due to discontinuity at the semiconductor – channel interface in addition to built‐in‐potential. We have developed some new relations governing the operation of short‐channel devices. Analysis of relation shows that in the absence of drain‐to‐source voltage (or for very low drain‐to‐source voltage), the position of minimum potential will occur exactly at the middle of the channel. The short‐channel effect is not only observed due to applied drain‐to‐source voltage, but also due to edge potential when no bias is applied between drain and source.

Citation

Singh, A.K., Gurunarayanan, S., Ramachandran, V. and Umashankar, M. (2003), "Edge potential effect on the operation of short‐channel devices", Microelectronics International, Vol. 20 No. 3, pp. 23-28. https://doi.org/10.1108/13565360310487918