TY  - JOUR
AB  - The present experiments are intended to help characterize defects in very thin MOS oxide and at its Si/SiO2 interface using a temperature‐dependent electrical characterization method, high low temperature capacitance voltage method and, especially, to investigate high temperature range. Oxide‐fixed traps are differentiated from slow‐state traps and from fast‐state traps by evaluating their electrical behaviour at different temperatures. The analysis points out the excess current after Fowler Nordheim electron injection based on hole generation, trapping, and hopping transport at high temperatures. The defect relaxation property versus temperature is investigated and defect relaxation activation energies are calculated. Creation mechanisms of interface states are especially identified by injection at different temperatures and these are compared with the other two kinds of defects. Fast‐state traps and all defect cross‐sections are calculated along and their creation activation energies are determined from Arrhenius plots.
VL  - 20
IS  - 2
SN  - 1356-5362
DO  - 10.1108/13565360310472176
UR  - https://doi.org/10.1108/13565360310472176
AU  - Rosaye Jean‐Yves
AU  - Mialhe Pierre
AU  - Charles Jean‐Pierre
PY  - 2003
Y1  - 2003/01/01
TI  - Defect evolutions with different temperature injections in MOSFETs
T2  - Microelectronics International
PB  - MCB UP Ltd
SP  - 24
EP  - 31
Y2  - 2024/04/20
ER  -