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Effect of gamma radiation onto the properties of TeO2 thin films

K. Arshak (Electronic & Computer Engineering Department, University of Limerick Limerick, Ireland)
O. Korostynska (Electronic & Computer Engineering Department, University of Limerick Limerick, Ireland)

Microelectronics International

ISSN: 1356-5362

Publication date: 1 December 2002

Abstract

The effects of γ‐radiation on both the optical and the electrical properties of Tellurium dioxide (TeO2) thin films were investigated. TeO2 thin films were fabricated using thermal vacuum deposition method. Samples were exposed to a 60Co γ‐radiation source with a dose rate of 6 Gy/min. Absorption spectra for TeO2 thin films were recorded and values of the optical band gap for as‐deposited and γ‐irradiated films were calculated. Sets of measurements based on Hall effect were carried out. From the data received the dependences of sheet resistance, density of charge carriers, mobility and Hall coefficient with radiation dose were determined.

Keywords

Citation

Arshak, K. and Korostynska, O. (2002), "Effect of gamma radiation onto the properties of TeO2 thin films", Microelectronics International, Vol. 19 No. 3, pp. 30-34. https://doi.org/10.1108/13565360210445023

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MCB UP Ltd

Copyright © 2002, MCB UP Limited

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