To read this content please select one of the options below:

New approach for calculation of line parameters of IC interconnects

Hasan Ymeri (Department of Electrical Engineering (ESAT), Katholieke Universiteit Leuven, Leuven, Belgium)
Bart Nauwelaers (Department of Electrical Engineering (ESAT), Katholieke Universiteit Leuven, Leuven, Belgium)
Karen Maex (IMEC v.z.w., Leuven, Belgium)
David De Roest (IMEC v.z.w., Leuven, Belgium)

Microelectronics International

ISSN: 1356-5362

Article publication date: 1 April 2001

110

Abstract

A new method for analysis of IC interconnects propagation parameters is suggested. A potential integral formalism is employed that enables us to express general solutions for the scalar potential in each layer of a multilayer model. These expressions for potential led to the derivation of an equation for calculating the line parameters of interconnect lines in such a multilayer configuration. This approach is verified by two‐dimensional examples of the integrated circuit interconnects with errors within 0.5 per cent to 1 per cent.

Keywords

Citation

Ymeri, H., Nauwelaers, B., Maex, K. and De Roest, D. (2001), "New approach for calculation of line parameters of IC interconnects", Microelectronics International, Vol. 18 No. 1, pp. 29-31. https://doi.org/10.1108/13565360110380099

Publisher

:

MCB UP Ltd

Copyright © 2001, MCB UP Limited

Related articles