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Substrate integrated packaging for RF‐applications

H. Richter (Alcatel Corporate Research Centre, Stuttgart, Germany)
D. Ferling (Alcatel Corporate Research Centre, Stuttgart, Germany)
F. Buchali (Alcatel Corporate Research Centre, Stuttgart, Germany)
W. Heck (Alcatel Corporate Research Centre, Stuttgart, Germany)

Microelectronics International

ISSN: 1356-5362

Article publication date: 1 April 2000



In this paper, Substrate Integrated Packaging (SIP) based on thin film multilayer technology is presented. Coplanar waveguide feedthroughs calculated with 3D‐Finite Differential Methods were manufactured using a ceramic or silicon carrier, gold conductors and polyimide as dielectric. The substrate integrated packages were realized with metallic frames and lids mounted on the thin film circuitry. S‐parameter measurements show the superior quality of the feedthroughs. To verify the new packaging concept, a 10GHz and a 58GHz amplifier module were realized. From these modules the potential of the SIP‐technology is demonstrated.



Richter, H., Ferling, D., Buchali, F. and Heck, W. (2000), "Substrate integrated packaging for RF‐applications", Microelectronics International, Vol. 17 No. 1, pp. 31-36.




Copyright © 2000, MCB UP Limited

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