Effect of Ag content on wetting properties and solidus temperature of Sn‐8.5Zn‐xAg‐0.01Al‐0.1Ga lead‐free solders

Abstract

Purpose

To study the effect of Ag content on the melting temperature and wetting properties of Sn‐8.5Zn‐xAg‐0.01Al‐0.1Ga lead‐free Solders.

Design/methodology/approach

The solder alloys used in the experiment were Sn‐8.5Zn‐xAg‐0.01Al‐0.1Ga (x=0, 0.1, 0.3, 0.5, 1 and 1.5). In this study, the alloys were initially studied using differential scanning calorimetry to determine their melting temperatures. Afterward, the solderability of the solders was studied using wetting balance and contact angle methods. Moreover, the microstructures of the solders were also investigated with an optical microscope, scanning electron microscope, energy dispersive X‐ray, X‐ray diffraction and electron probe micro analysis.

Findings

A small increase in Ag content in the Sn‐8.5Zn‐xAg‐0.01Al‐0.1Ga solders, from 0.1 to 1.0 wt%, has been found to lower their solidus temperature from 198.05°C to 190.20°C. A Ag content of 1.5 wt% increased the solidus temperature of the studied solder systems to 197.79°C. Furthermore, the study also found that the addition of silver lowered the wetting forces of the studied solders. The formation of multi‐intermetallic layers of Cu‐Zn and Ag‐Zn at the interface between the studied solders and copper might explain the reduction of the wetting forces.

Research limitations/implications

The silver contents in the studied Sn‐8.5Zn‐xAg‐0.01Al‐0.1Ga solders were limited to 0, 0.1, 0.3, 0.5, 1.0 and 1.5 wt%.

Practical implications

Useful literature for solder alloy designers and SMT engineers.

Originality/value

The paper provides the answers to the research question of what is the effect of silver content on the melting temperature and wetting properties of Sn‐8.5Zn‐xAg‐0.01Al‐0.1Ga solders.

Citation

Lai, R.S., Lin, K.L. and Salam, B. (2008), "Effect of Ag content on wetting properties and solidus temperature of Sn‐8.5Zn‐xAg‐0.01Al‐0.1Ga lead‐free solders", Soldering & Surface Mount Technology, Vol. 20 No. 1, pp. 22-26. https://doi.org/10.1108/09540910810861459