Quantum interface conditions for quasi‐Fermi levels in an abrupt heterojunction

Abstract

We present a semi‐quantum model including tunneling effects across an abrupt heterojunction. The discontinuity of the effective masses and the energy bands are considered. The quantum transmission conditions for the quasi‐Fermi levels are obtained using WKB approximation. We use mixed finite element approach and a two dimensional mesh which is double‐valued for quasi‐Fermi levels at a heterojunction. A GaAs/GaAIAs heterojunction diode is then simulated using both drift‐diffusion and semi‐quantum model by varying doping density at low temperature.

Citation

El Boukili, A. (1999), "Quantum interface conditions for quasi‐Fermi levels in an abrupt heterojunction", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 18 No. 4, pp. 556-569. https://doi.org/10.1108/03321649910296555