Heat generation and transport in nanoscale semiconductor devices via Monte Carlo and hydrodynamic simulations

Abstract

Purpose

The purpose of this paper is to set up a consistent off‐equilibrium thermodynamic theory to deal with the self‐heating of electronic nano‐devices.

Design/methodology/approach

From the Bloch‐Boltzmann‐Peierls kinetic equations for the coupled system formed by electrons and phonons, an extended hydrodynamic model (HM) has been obtained on the basis of the maximum entropy principle. An electrothermal Monte Carlo (ETMC) simulator has been developed to check the above thermodynamic model.

Findings

A 1D n⁺−n−n⁺ silicon diode has been simulated by using the extended HM and the ETMC simulator, confirming the general behaviour.

Research limitations/implications

The paper's analysis is limited to the 1D case. Future researches will also consider 2D realistic devices.

Originality/value

The non‐equilibrium character of electrons and phonons has been taken into account. In previous works, this methodology was used only for equilibrium phonons.

Citation

Muscato, O. and Di Stefano, V. (2011), "Heat generation and transport in nanoscale semiconductor devices via Monte Carlo and hydrodynamic simulations", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 30 No. 2, pp. 519-537. https://doi.org/10.1108/03321641111101050

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