Simulation of submicron pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistors

Abstract

In this paper, we present the results of submicron pseudomorphic AlGaAs/InGaAs/ GaAs HEMT simulations. Our main interest is the study of electronic temperature behavior in the device and improvement of the current‐voltage characteristic curves. Three types of models are being used. The first is the well known drift‐diffusion model. The second is of the hydrodynamic type and the third is a combination of the two preceding models. The numerical treatment is based on the discretization by the Galerkin finite element method for both Poisson and continuity equations with the streamline‐diffusion method being used for the energy equation. A comparison of the different approaches have been realized and a synthesis on the validity of each of these models is being drawn.

Citation

Lamari, N., Mfitih, M. and Nassif, N. (2002), "Simulation of submicron pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistors", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 21 No. 2, pp. 173-192. https://doi.org/10.1108/03321640210416296