Measurement of simulated active device and RF trace heating in high frequency circuit laminates

Abstract

Purpose

The purpose of this paper is to quantify the effects of thermal conductivity (TC), dielectric constant and dissipation factor (DF) of circuit laminates on the temperature rise with active components and RF trace heating.

Design/methodology/approach

Temperature rise measurements were made on surface mounted chip resistors (to simulate active components) at various dissipated power levels, with and without “via farms”. The RF heating temperature rise of 50 ohm microstrip transmission lines on 0.5 mm laminates was also measured by the same method.

Findings

The chip resistor temperature rise correlated with the independently measured TC of the laminate materials. The use of a “via farm” substantially reduced the temperature rise in all materials, but the higher TC laminates still conferred a measurable advantage. The trace temperature rise due to RF heating correlated with both TC and DF.

Research limitations/implications

It was shown that the one‐dimensional heat transfer model does not accurately calculate the temperature rise due to significant in‐plane heat spreading, particularly with lower TC materials.

Originality/value

This paper details how temperature rise of both active components and 50 ohm transmission lines is affected by the thermal and electrical properties of the circuit laminate.

Citation

Caisse, C.J., Coonrod, J. and Horn, A.F. (2011), "Measurement of simulated active device and RF trace heating in high frequency circuit laminates", Circuit World, Vol. 37 No. 4, pp. 3-9. https://doi.org/10.1108/03056121111180839