The purpose of this paper is to present the dependence of capacitive sensing of organic vapours by porous silicon (PS) on its molecular structure for the realization of a organic vapour sensor, compatible with existing silicon technology, with desired miniaturization and selectivity.
The method introduces large surface area of PS obtained by electrochemically etching of silicon wafer for characterization of organic vapours through capacitive sensing.
The method provides a comparative study of sensor response for organic vapour molecules of different structures and leads to an insight into the sensing mechanism.
The surface of PS has been stabilized by thermal oxidation process.
The method is useful for the development of a simple, cost‐effective sensor for selective gas analysis.
The result is an outcome of regular experimental work carried out to observe the capacitive sensing behavior of PS for different organic vapours.
Hasan, P.M.Z., Islam, S.S., Islam, T., Azam, A. and Harsh, (2010), "Capacitive detection of organic vapours at low ppm level by porous silicon: role of molecular structure in sensing mechanism", Sensor Review, Vol. 30 No. 4, pp. 336-340. https://doi.org/10.1108/02602281011072224Download as .RIS
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