Capacitive detection of organic vapours at low ppm level by porous silicon: role of molecular structure in sensing mechanism

Abstract

Purpose

The purpose of this paper is to present the dependence of capacitive sensing of organic vapours by porous silicon (PS) on its molecular structure for the realization of a organic vapour sensor, compatible with existing silicon technology, with desired miniaturization and selectivity.

Design/methodology/approach

The method introduces large surface area of PS obtained by electrochemically etching of silicon wafer for characterization of organic vapours through capacitive sensing.

Findings

The method provides a comparative study of sensor response for organic vapour molecules of different structures and leads to an insight into the sensing mechanism.

Research limitations/implications

The surface of PS has been stabilized by thermal oxidation process.

Practical implications

The method is useful for the development of a simple, cost‐effective sensor for selective gas analysis.

Originality/value

The result is an outcome of regular experimental work carried out to observe the capacitive sensing behavior of PS for different organic vapours.

Citation

Hasan, P.M.Z., Islam, S.S., Islam, T., Azam, A. and Harsh (2010), "Capacitive detection of organic vapours at low ppm level by porous silicon: role of molecular structure in sensing mechanism", Sensor Review, Vol. 30 No. 4, pp. 336-340. https://doi.org/10.1108/02602281011072224