The development of the combined voltage reference and temperature sensor is focused on the RFID applications. The passive RFID systems derive power in the tag solely from rectifying the incident RF power. The dc power supply may be coupled with the RF signal, voltage drop, and noise. The voltage reference here is to provide a stable voltage for well‐biasing the internal analog circuitry. For the temperature sensing RFID applications, the combined device also gives a highly linear temperature sensor for wide‐temperature range measurements. Seeks to discuss this subject.
For voltage reference design, a self‐PTAT current is generated for compensating the diode‐connected NMOS transistor to achieve temperature‐stable voltage reference. Moreover, a temperature sensor with high linearity is developed by amplifying the linear portion and restricting the nonlinear part of temperature information.
Owing to better‐compensation, the voltage reference provides a stable voltage of 718.7±2.9 mV, and the temperature sensor has linearity over 99.8 percent for a wide‐temperature operation from −50 to 150°C.
Owing to the small size, 0.38 × 0.24 mm2, of the combined device, it can be embedded into a RFID tag without increasing the RFID size. The voltage reference can serve as a stable voltage for stabilizing the behavior of analog circuits of the tag, and the temperature sensor probes the environment temperature. Then the information will be delivered to the RFID reader by the tag.
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