Molecular dynamics simulation on the out‐of plane thermal conductivity of single‐crystal silicon thin films
Aircraft Engineering and Aerospace Technology
ISSN: 0002-2667
Article publication date: 1 December 2005
Abstract
Purpose
Combining the characteristic of satellite “minisize nucleus” non‐equilibrium molecular dynamics (NEMD) method is used. We select corresponding Tersoff potential energy function to build model and, respectively, simulate thermal conductivities of silicon nanometer thin film.
Design/methodology/approach
NEMD method is used, and the corresponding Tersoff potential energy function is used to build model.
Findings
The thermal conductivities of silicon nanometer thin film are markedly below the corresponding thermal conductivities of their crystals under identical temperature. The thermal conductivities are rising with the increase of thickness of thin film; what's more, the conductivities have a linear approximation with thickness of the thin film.
Research limitations/implications
It is difficult to do physics experiment.
Practical implications
The findings have some theory guidance to analyze satellite thermal control.
Originality/value
The calculation results of thermal conductivities specify distinct size effect. The normal direction thick film thermal conductivity of silicon crystal declines with the increasing temperature. The thermal conductivities are rising with the increase of thickness of thin film; what's more, the conductivities have a linear approximation with thickness of the thin film.
Keywords
Citation
Wu, G., Sun, Z., Kong, X. and Zhao, D. (2005), "Molecular dynamics simulation on the out‐of plane thermal conductivity of single‐crystal silicon thin films", Aircraft Engineering and Aerospace Technology, Vol. 77 No. 6, pp. 475-477. https://doi.org/10.1108/00022660510628462
Publisher
:Emerald Group Publishing Limited
Copyright © 2005, Emerald Group Publishing Limited